PART |
Description |
Maker |
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
3SK296 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
3SK51 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
BF980A |
Silicon N-Channel dual gate MOSFET 硅N沟道双栅MOSFET
|
Electronic Theatre Controls, Inc.
|
BF998R BF998 BF998/T1 |
TRANSISTOR MOSFET Silicon N-channel dual-gate
|
Philips
|
3SK298 |
Silicon N-Channel Dual Gate MOS FET
|
HITACHI[Hitachi Semiconductor]
|
BF901R BF901 |
Silicon n-channel dual gate MOS-FETs
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
NE41137 |
N-Channel GaAs Dual Gate MES FET N-CHANNEL GAASDUAL-GATE MESFET
|
California Eastern Laboratories NEC[NEC]
|
IN74HC20A IN74HC20AD IN74HC20AN |
Dual 4-Input NAND Gate High-Performance Silicon-Gate CMOS
|
IK Semicon Co., Ltd
|
IN74HCT20N IN74HCT20 IN74HCT20D |
DUAL 4-INPUT NAND GATE High-Performance Silicon-Gate CMOS
|
INTEGRAL Semiconductor Devices INTEGRAL[Integral Corp.]
|